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1

The Back-Side Morphology of LPE-Grown AlGaAs/GaAs/AlGaAs Heterostructures after the Complete Removal of the GaAs Substrate by Selective Etching

Dr. Yu. B. Bolkhovityanov, E. H. Hairi, V. I. Yudaev

Journal:

Crystal Research and Technology

Year:

1992

Language:

english

File:

PDF, 308 KB

english, 1992

2

The initial growth stages of III–V lattice-mismatched films grown by liquid phase epitaxy

Yu.B. Bolkhovityanov, Yu.D. Vaulin

Journal:

Thin Solid Films

Year:

1982

Language:

english

File:

PDF, 931 KB

english, 1982

3

The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs

Yu.B. Bolkhovityanov, V.I. Yudaev, A.K. Gutakovsky

Journal:

Thin Solid Films

Year:

1986

Language:

english

File:

PDF, 3.37 MB

english, 1986

4

Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, O. P. Pchelyakov, L. V. Sokolov

Journal:

Year:

2008

Language:

english

File:

PDF, 571 KB

english, 2008

5

Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures

Bolkhovityanov, Y.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.

Journal:

Thin Solid Films

Year:

2016

Language:

english

File:

PDF, 1.62 MB

english, 2016

6

Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations

Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.

Journal:

Thin Solid Films

Year:

2019

Language:

english

File:

PDF, 1.09 MB

english, 2019

7

Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x-As grading heterojunctions formation

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, V. I. Yudaev

Journal:

Crystal Research and Technology

Year:

1980

Language:

english

File:

PDF, 737 KB

english, 1980

8

Effect of buffer layers on the dislocation structure of heteroepitaxial systems

Dr. Yu. B. Bolkhovityanov, Yu. D. Vaulin, A. K. Gutakovsky, S. I. Stenin, V. I. Yudaev

Journal:

Crystal Research and Technology

Year:

1981

Language:

english

File:

PDF, 742 KB

english, 1981

9

A Multipurpose Graphite Boat for LPE Growth of Multilayer Heterostructures

Dr. Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, E. H. Hairi, S. I. Chikichev, V. I. Yudaev

Journal:

Crystal Research and Technology

Year:

1982

Language:

english

File:

PDF, 574 KB

english, 1982

10

Study of InxGa1–xP/GaAs Films Formation on the Basis of In–Ga–P Liquidus Precised Investigation

Dr. Yu. B. Bolkhovityanov

Journal:

Crystal Research and Technology

Year:

1982

Language:

english

File:

PDF, 458 KB

english, 1982

11

Isothermal contact of III–V saturated solutions with different III-V substrates: Two mode of behavior

Dr. Yu. B. Bolkhovityanov

Journal:

Crystal Research and Technology

Year:

1983

Language:

english

File:

PDF, 558 KB

english, 1983

12

Instability of “slow” solid-liquid interface relaxation before the hetero-LPE of III-V compounds

Dr. Yu. B. Bolkhovityanov, S. I. Chikichev

Journal:

Crystal Research and Technology

Year:

1983

Language:

english

File:

PDF, 717 KB

english, 1983

13

Dislocation etch-pits revealed in submicron (100) GaAs epilayers by selective dissolution in the saturated GaSb melt

Dr. Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, E. M. Trukhanov

Journal:

Crystal Research and Technology

Year:

1985

Language:

english

File:

PDF, 399 KB

english, 1985

14

The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE

Yu. B. Bolkhovityanov

Journal:

Crystal Research and Technology

Year:

1989

Language:

english

File:

PDF, 705 KB

english, 1989

15

A difference between initial growth stages of the AlGaAs/GaAs and GaAs/AlGaAs heterostructures produced by contact replacement of solutions

Dr. Yu. B. Bolkhovityanov, L. M. Logvinskii, N. S. Rudaya

Journal:

Crystal Research and Technology

Year:

1989

Language:

english

File:

PDF, 623 KB

english, 1989

16

Investigation of growth kinetics and mechanism of GaAs and (InGa)As thin films grown by a step-cooling technique of the liquid phase epitaxy

Yu.B. Bolkhovityanov, H.B. Zembatov

Journal:

Journal of Crystal Growth

Year:

1977

Language:

english

File:

PDF, 586 KB

english, 1977

17

The peculiarities of isothermal contact of liquid and solid phase during the LPE of A3B5 compounds

Yu.B. Bolkhovityanov

Journal:

Journal of Crystal Growth

Year:

1981

Language:

english

File:

PDF, 1.10 MB

english, 1981

18

The contact phenomena between the liquid phase and the substrate during LPE of A3B5 compounds

Yu.B. Bolkhovityanov

Journal:

Journal of Crystal Growth

Year:

1982

Language:

english

File:

PDF, 501 KB

english, 1982

19

The formation of alxGa1-xAs layers by regrowth on the surface of GaAs during its contact with the undersaturated liquid-containing Al

Yu.B. Bolkhovityanov, R.I. Bolkhovityanova, Yu.D. Vaulin, T.A. Gavrilova, B.Z. Olshanetsky, S.I. Stenin

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 726 KB

english, 1986

20

Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources

Yu.B. Bolkhovityanov, V.L. Alperovich, A.S. Jaroshevich, N.V. Nomerotsky, A.G. Paulish, A.S. Terekhov, E.M. Trukhanov

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 243 KB

english, 1995

21

Liquid phase epitaxial growth of elastically strained InxGa1−xP and InxGa1−xAsyP1−yP solid solutions on GaAs substrates

Yu.B. Bolkhovityanov, A.M. Gilinsky, N.V. Nomerotsky, E.M. Trukhanov, A.S. Jaroshevich

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 462 KB

english, 1995

22

Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps

Yu.B. Bolkhovityanov, A.S. Jaroshevich, N.V. Nomerotsky, M.A. Revenko, E.M. Trukhanov

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 498 KB

english, 1996

23

The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions

Yu.B. Bolkhovityanov

Journal:

Progress in Crystal Growth and Characterization

Year:

1989

Language:

english

File:

PDF, 2.32 MB

english, 1989

24

New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate

V.L. Alperovich, Yu.B. Bolkhovityanov, A.G. Paulish, A.S. Terekhov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1994

Language:

english

File:

PDF, 586 KB

english, 1994

25

Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes

P. Drescher, S. Plützer, E. Reichert, M. Schemies, V.L. Alperovich, Yu.B. Bolkhovityanov, A.S. Jaroshevich, A.G. Paulish, H.E. Scheibler, A.S. Terekhov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1996

Language:

english

File:

PDF, 490 KB

english, 1996

26

Heterostructures GexSi1−x/Si(0 0 1) grown by low-temperature (300–400 °C) molecular beam epitaxy: Misfit dislocation propagation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 349 KB

english, 2005

27

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 402 KB

english, 2006

28

Sb as surfactant at plastic relaxation of GeSi/Si(0 0 1) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Yu. B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 221 KB

english, 2006

29

Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (0 0 1)→(1 1 1) Si substrates

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 1.61 MB

english, 2008

30

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 973 KB

english, 2010

31

High power neutron converter for low energy proton/deuteron beams

O. Alyakrinskiy, M. Avilov, D. Bolkhovityanov, J. Esposito, S. Fadeev, K. Gubin, Ya. Kandiev, A. Korchagin, N. Kot, A. Lavrukhin, N. Lebedev, P. Logatchev, P. Martyshkin, S. Morozov, V. Plokhoi, S. Sa

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2006

Language:

english

File:

PDF, 1.03 MB

english, 2006

32

Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov

Journal:

Thin Solid Films

Year:

2004

Language:

english

File:

PDF, 573 KB

english, 2004

33

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

M.A Putyato, V.V Preobrazhenskii, B.R Semyagin, Yu.B Bolkhovityanov, A.M Gilinsky, A.K Gutakousky, M.A Revenko, O.P Pchelyakov, D.F Feklin

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

34

Molecular beam epitaxy of silicon–germanium nanostructures

O.P Pchelyakov, Yu.B Bolkhovityanov, A.V Dvurechenskii, A.I Nikiforov, A.I Yakimov, B Voigtländer

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 929 KB

english, 2000

35

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Yu.B Bolkhovityanov, A.K Gutakovskii, V.I Mashanov, O.P Pchelyakov, M.A Revenko, L.V Sokolov

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 1.56 MB

english, 2001

36

Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, N. B. Zembatov, N. E. Marchenko

Journal:

physica status solidi (a)

Year:

1974

Language:

english

File:

PDF, 389 KB

english, 1974

37

Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova

Journal:

physica status solidi (a)

Year:

1975

Language:

english

File:

PDF, 380 KB

english, 1975

38

Study of doping of InxGa1−xAs films with germanium

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, N. E. Marchenko, B. V. Morozov

Journal:

physica status solidi (a)

Year:

1975

Language:

english

File:

PDF, 497 KB

english, 1975

39

The influence of indium on the pn junction formation in Sidoped LPE layers of gallium arsenide

R. I. Bolkhovityanova, Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Year:

1976

Language:

english

File:

PDF, 129 KB

english, 1976

40

The lattice-pulling effect induced by the film stresses. Conditions of existence and discovery

Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 559 KB

english, 1983

41

Growth peculiarities of graded band Gap GaAsSb/GaAs heterostructures and effective light modulation in the 1.06 μm wavelength region

Yu. B. Bolkhovityanov, B. A. Bobylev, V. I. Korzhov, V. I. Yudaev, E. H. Hairi

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 359 KB

english, 1983

42

Auger analysis of a GaAs (111) a surface after its contact with the InGaAsP saturated liquid

Yu. B. Bolkhovityanov, Yu. D. Vaulin, B. Z. Olshanetskii, S. I. Stenin, S. A. Teys

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 191 KB

english, 1984

43

Stress-induced isothermal formation of films during LPE growth of III–V compounds with Δ a/a # 0

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova

Journal:

physica status solidi (a)

Year:

1985

Language:

english

File:

PDF, 171 KB

english, 1985

44

Discovery of electron traps in lpe gaas grown from a bismuth melt

N. A. Yakusheva, V. Ya. Prinz, Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 170 KB

english, 1986

45

A gaAs surface after its contact with an undersaturated AlGaAs liquid. Observation after anodic oxidation

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova

Journal:

physica status solidi (a)

Year:

1987

Language:

english

File:

PDF, 486 KB

english, 1987

46

Surface Composition of Epitaxial Films of Gallium Arsenide and Related Compounds After Termination of their Growth from the Liquid Phase

Yu. B. Bolkhovityanov, A. E. Dolbak

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 389 KB

english, 1990

47

Elastically strained InGaAsP films grown by LPE and conception of stress-induced supercooling

Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Year:

1995

Language:

english

File:

PDF, 528 KB

english, 1995

48

Moscow ceramic tile factory

B. I. Bolkhovityanov

Journal:

Glass and Ceramics

Year:

1970

Language:

english

File:

PDF, 148 KB

english, 1970

49

Thermal experimental results on the prototype for high power neutron converter for low energy proton/deuteron beams

O. Alyakrinskiy, A. Antoshin, M. Avilov, D. Bolkhovityanov, S. Fadeev, V. Golikov, K. Gubin, N. Lebedev, P. Logatchev, V. Popov, S. Shiyankov, L.B. Tecchio

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2007

Language:

english

File:

PDF, 4.19 MB

english, 2007

50

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, B. Voigtländer

Journal:

Year:

2000

Language:

english

File:

PDF, 436 KB

english, 2000

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